Low-k dielectric layer with overlying adhesion layer

Details Low-k dielectric layer with overlying adhesion layer Low-k dielectric layer with overlying adhesion layer

2005-09-06

2005-09-06

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S763000, C438S790000, C438S958000, C257S760000

Reexamination Certificate

active

06939792

ABSTRACT:
In one embodiment, a method of fabricating an integrated circuit includes forming a low-k dielectric layer over metal lines, forming an adhesion layer over the low-k dielectric layer, and forming a capping layer over the adhesion layer. The low-k dielectric may comprise SiLK™ dielectric material, while the capping layer may comprise TEOS. The resulting stack of dielectric materials may be employed in a passivation level to protect the metal lines. For example, a topside layer may be formed over the capping layer.

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SiLK Products (10 pages). The Dow Chemical Company, 1995-2002, webpage [online]; retrieved on Jan. 2, 2003; retrieved from the internet: <URL:http://www.dow.com/silk>.

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