Low-k dielectric layer with air gaps

Details Low-k dielectric layer with air gaps Low-k dielectric layer with air gaps

2005-06-07

2005-06-07

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S631000, C438S633000, C257S752000, C257S758000

Reexamination Certificate

active

06903002

ABSTRACT:
In one embodiment, a metal level includes a plurality of metal lines. A low-k dielectric is deposited over the metal level such that an air gap forms at least between two metal lines. The relatively low dielectric constant of the low-k dielectric reduces capacitance on metal lines regardless of whether an air gap forms or not. The air gap in the low-k dielectric further reduces capacitance on metal lines. The reduced capacitance translates to lower RC delay and faster signal propagation speeds.

REFERENCES:
patent: 5847464 (1998-12-01), Singh et al.
patent: 6251799 (2001-06-01), Lai et al.
patent: 6387797 (2002-05-01), Bothra et al.
patent: 6522005 (2003-02-01), Allman et al.

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