Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-22
2010-11-30
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C257SE21021
Reexamination Certificate
active
07842604
ABSTRACT:
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
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Billington Karen
Carris Michael
Crew William
Gupta Atul
Mountsier Thomas W.
Novellus Systems Inc.
Stark Jarrett J
Weaver Austin Villeneuve & Sampson LLP
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