Low imprint ferroelectric material for long retention memory and

Details Low imprint ferroelectric material for long retention memory and Low imprint ferroelectric material for long retention memory and

1997-03-03

1998-07-21

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365171, 257295, 25251913, 25251915, 428692, 428697, 428702, 428901, 3613215, G11C 1122

Patent

active

057843104

ABSTRACT:
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.

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Smolenskii, G.A. et al., "Ferroelectrics and Related Materials," vol. 3 of Ferroelectricity and Related Phenomena, Gordon & Breach Science Publishers, 1984, pp. 670-733.

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