Low dielectric constant silicon dioxide sandwich layer

Details Low dielectric constant silicon dioxide sandwich layer Low dielectric constant silicon dioxide sandwich layer

1996-08-02

1998-09-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438784, H01L 21316

Patent

active

058077855

ABSTRACT:
An improved sandwich layer of silicon dioxide layers for gap filling between metal lines. This is accomplished using a first layer formed in a PECVD process using TEOS and a fluorine-containing compound to give a barrier layer with a dielectric constant of less than 4.0, preferably approximately 3.5. Subsequently, an SACVD process is used with TEOS to form a gap filling layer. By appropriately choosing the thickness of the respective layers, one can adjust the dielectric to a value which is a combination of the dielectric constants of the two different layers, preferably giving a dielectric constant of approximately 3.6-3.7.

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