Low dielectric constant dielectric films and process for making

Details Low dielectric constant dielectric films and process for making Low dielectric constant dielectric films and process for making

1999-08-27

2000-10-31

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438758, 438558, 438542, 438424, 438398, 438765, 438319, 438619, H01L 2131

Patent

active

061402494

ABSTRACT:
A low dielectric constant material and a process for controllably reducing the dielectric constant of a layer of such material is provided and comprises the step of exposing the layer of dielectric material to a concentration of an oxygen plasma at a temperature and a pressure sufficient for the oxygen plasma to etch the layer of dielectric material to form voids in the layer of dielectric material. The process may also include the step of controlling the reduction of the dielectric constant by controlling the size and density of the voids. The size and density of the voids can be controlled by varying the pressure under which the reaction takes place, by varying the temperature at which the reaction takes place, by varying the concentration of the oxygen plasma used in the reaction or by varying a combination of these parameters. The process of the present invention is particularly useful in the fabrication of semiconductor devices.

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patent: 5598026 (1997-01-01), Kapoor et al.
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patent: 5723368 (1998-03-01), Cho et al.
"Aerogel and Xerogel" Dispatches From The World of Computing, Pipeline, PC Magazine, Mar. 10, 1998, p. 9.
WEI et al., "Controlled growth of SiO.sub.2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes" J. Appl. Phys. 81 (9), May 1, 1997, pp. 6415-6424.

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