Low dielectric constant coating of conductive material in a dama

Details Low dielectric constant coating of conductive material in a dama Low dielectric constant coating of conductive material in a dama

1999-05-05

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438626, 438634, 438597, H01L 2358

Patent

active

061001813

ABSTRACT:
A method for manufacturing an integrated circuit using damascene processes is provided in which planar surfaces subjected to chemical-mechanical polishing are protected by a protective low dielectric constant coating. The coatings are of organic silicon materials which are spun on and baked in preparation of the deposition of subsequent dielectric layers.

REFERENCES:
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5877075 (1999-03-01), Dai et al.

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