Low density high frequency process for a parallel-plate electrod

Details Low density high frequency process for a parallel-plate electrod Low density high frequency process for a parallel-plate electrod

1998-02-13

2000-03-14

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438729, H01L 2100

Patent

active

060368780

ABSTRACT:
The present invention is embodied in a method of operating an inductively coupled plasma reactor for processing a semiconductor wafer, the reactor including a vacuum chamber for containing the wafer, a process gas source, a semiconductor window electrode facing an interior portion of the chamber, an inductive power radiator on an exterior side of the semiconductor window electrode, the inductive field having a skin depth generally decreasing with the frequency of the RF inductive field and with the density of the plasma in the chamber and generally increasing with the pressure inside the vacuum chamber, the inductive coupling of the RF field tending to approach extinguishment as the skin depth approaches the spacing between the wafer and the window electrode, a method for maintaining an intermediate plasma density inside the chamber without extinguishing the inductive coupling of the RF field, the method including operating the reactor at a selected flow rate of the process gas, a selected chamber pressure and a selected plasma source power level corresponding to the reduced plasma density, and maintaining the frequency of the RF field at least at a level sufficient to limit the skin depth to a depth less than the electrode-to-wafer spacing, whereby to maintain the inductive coupling of the RF field.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4261762 (1981-04-01), King
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4427762 (1984-01-01), Takahashi et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4457359 (1984-07-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4807016 (1989-02-01), Douglas
patent: 4810935 (1989-03-01), Boswell
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4870245 (1989-09-01), Price et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5187454 (1993-02-01), Collins et al.
patent: 5203956 (1993-04-01), Hansen
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5249251 (1993-09-01), Egalon et al.
patent: 5258824 (1993-11-01), Carlson et al.
patent: 5276693 (1994-01-01), Long et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5326404 (1994-07-01), Sato
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5349313 (1994-09-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5414246 (1995-05-01), Shapona
patent: 5423945 (1995-06-01), Marks et al.
patent: 5477975 (1995-12-01), Rice et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5556501 (1996-09-01), Collins et al.
Coburn, W.J., "Increasing the Etch Rate Ratio 0Si02/Si in Fluorocarbon Plasma Etching," IBM Technical Disclosure, vol. 19, No. 10, Mar. 1977.
Matsuo, Seitaro, "Selective Etching of Si02 Relative to Si by Plasma Reactive Sputter Etching," J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980.
European Patent Office Communication pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan. 17, 1996.
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd).
Patent Abstracts of Japan, Publication No. 06196446 A, Jul. 15, 1994 (Nec Corp).
Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron LTD).
Patent Abstracts of Japan, Publication No. 08017799 A, Jan. 19, 1996 (Plasma Syst: KK).
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co. Ltd; Toagosei Chem Ind Co Ltd).

Affiliated with

Also associated with

Rating

Low density high frequency process for a parallel-plate electrod does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low density high frequency process for a parallel-plate electrod, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low density high frequency process for a parallel-plate electrod will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-165862