Low defect thin resist processing for deep submicron lithography

Details Low defect thin resist processing for deep submicron lithography Low defect thin resist processing for deep submicron lithography

1999-06-18

2000-12-05

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430312, G03F 7004

Patent

active

06156480&

ABSTRACT:
In one embodiment, the present invention relates to a method of forming a short wavelength thin photoresist coating having a low defect density by depositing sequentially at least two discrete ultra-thin photoresist layers to form the short wavelength thin photoresist coating, each ultra-thin photoresist layer independently having a thickness from about from about 200 .ANG. to about 2,500 .ANG., the short wavelength thin photoresist coating, having a thickness of about 5,000 .ANG. or less.

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"Ultrathin Photoresists for EUV lithography", Rao, V. et al, SPIE, vol. 3676, pt.2, 1999, 615-626.
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Havard et al., "Design of a Positive Tone Water-Soluble Resist", Department of Chemistry and Chemical Engineering, University of Texas, SPIE vol. 3049, pp. 437-447.
Miles et al., "New Thermally Crosslikable Electron-Beam Resists: 1. Itaconic Anhydride-Methyl Methacrylate Copolymers", Polymer, 91, vol. 32, No. 3, (1991) pp. 484-488.

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