Low damage doping technique for self-aligned source and drain re

Details Low damage doping technique for self-aligned source and drain re Low damage doping technique for self-aligned source and drain re

1995-07-03

1999-11-02

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438559, 438563, 438231, H01L 21336

Patent

active

059769394

ABSTRACT:
A process for fabricating a source and drain region which includes a more lightly doped source and drain tip region immediately adjacent to the gate and a more heavily doped main portion of the source and drain region spaced apart from the gate. A first layer of glass (2% BSG) is used to provide the source of doping for the tip region and a second layer of glass (6% BSG) is used to provide the dopant for the more heavily doped major portion of source and drain regions. Spacers are formed between the glass layers to define the tip region from the main portion of the source and drain regions.

REFERENCES:
patent: 4079504 (1978-03-01), Kosa
patent: 4204894 (1980-05-01), Komeda et al.
patent: 5173440 (1992-12-01), Tsunashima et al.
patent: 5234850 (1993-08-01), Liao
patent: 5518945 (1996-05-01), Bracchitta et al.

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