Low cost method of providing a semiconductor device having a...

Details Low cost method of providing a semiconductor device having a... Low cost method of providing a semiconductor device having a...

2005-02-08

2005-02-08

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S697000, C438S700000, C438S704000, C438S705000, C438S745000

Reexamination Certificate

active

06852634

ABSTRACT:
A method of making a semiconductor device10by forming a first dielectric layer140on a substrate, etching through the first dielectric layer to form a trench150having a channel region135on a sidewall160of the trench, and laterally removing a portion of the first dielectric layer adjacent to the sidewall of the trench above the channel region for defining a source region280of the semiconductor device.

REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4399449 (1983-08-01), Herman et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4789882 (1988-12-01), Lidow
patent: 4959699 (1990-09-01), Lidow et al.
patent: 4974059 (1990-11-01), Kinzer
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5130767 (1992-07-01), Lidow et al.
patent: 5191396 (1993-03-01), Lidow et al.
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5418394 (1995-05-01), Hertrich
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 6097039 (2000-08-01), Peters et al.
patent: 6313504 (2001-11-01), Furuta et al.
patent: 6346726 (2002-02-01), Herman
patent: 6358818 (2002-03-01), Wu
patent: 6372583 (2002-04-01), Tyagi
patent: 6579768 (2003-06-01), Thwaite et al.
patent: 6638813 (2003-10-01), Tzeng et al.
patent: 6767835 (2004-07-01), Nariman et al.
patent: 09231372 (1999-06-01), None

Affiliated with

Also associated with

Rating

Low cost method of providing a semiconductor device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low cost method of providing a semiconductor device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low cost method of providing a semiconductor device having a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3508284