Low cost fabrication of high resistivity resistors

Details Low cost fabrication of high resistivity resistors Low cost fabrication of high resistivity resistors

2007-05-15

2007-05-15

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S190000, C438S210000, C438S385000, C257SE27016, C257SE27030, C257SE27033, C257SE27045

Reexamination Certificate

active

09833953

ABSTRACT:
In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon dioxide isolation region on the same chip. The layer is then doped over the transistor gate without doping the layer over the field oxide. A photoresist layer can be used as a barrier to implant doping, for example, to block N+ doping over the field oxide region. The entire layer is then doped, for example, with P type dopant after removal of the doping barrier. The second doping results in formation of a high resistivity resistor over the field oxide region, without affecting the transistor gate. Contact regions are then formed of a silicide, for example, for connecting the resistor to other devices.

REFERENCES:
patent: 5436177 (1995-07-01), Zaccherini
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 6156602 (2000-12-01), Shao et al.
patent: 6165861 (2000-12-01), Liu et al.

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