Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-04-03
2007-04-03
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C257SE21230
Reexamination Certificate
active
10360388
ABSTRACT:
Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.
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Ko Sen-Hou
Song Kevin H.
Applied Materials Inc.
Patterson and Sheridan
Zarneke David A.
LandOfFree
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