Low charge-up reactive ion metal etch process

Details Low charge-up reactive ion metal etch process Low charge-up reactive ion metal etch process

1995-04-28

1997-09-16

Nguyen, Nam

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

216 67, 216 70, 438654, H01L 2100

Patent

active

056676301

ABSTRACT:
A method for forming metal patterns through use of a multi-step magnetically assisted reactive ion etch plasma process. A metal layer is formed upon a semiconductor substrate. The metal layer is patterned with a photoresist composition which leaves exposed those regions of metal to be removed. The exposed metal is removed through a multi-step magnetically assisted reactive ion etch process. The first etch step is a primary metal etch at elevated levels of radio frequency power and magnetic field strength. The last etch step is a secondary metal over-etch step at lower levels of radio frequency power and magnetic field strength. Intermediate to the first etch step and last etch step are a multiplicity of etch process steps where the radio frequency power and magnetic field strength are independently and sequentially reduced.

REFERENCES:
patent: 5094712 (1992-03-01), Becker et al.
patent: 5259922 (1993-11-01), Yamano et al.
patent: 5266154 (1993-11-01), Tataumi
patent: 5277751 (1994-01-01), Ogle
patent: 5411631 (1995-05-01), Hori et al.
patent: 5543362 (1996-08-01), Wu
VLSI Technology by SM SZE 2.sup.nd Edition, pub by McGraw-Hill Singapore 1988 pp. 216-217.

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