Low capacitance ESD protection device, and integrated...

Details Low capacitance ESD protection device, and integrated... Low capacitance ESD protection device, and integrated...

2005-11-01

2005-11-01

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06960811

ABSTRACT:
A low capacitance ESD protection device. The device comprises a substrate, a well of a first conductivity type in the substrate, a first and second transistor of the first conductivity type respectively on two sides of the well, a guard ring of a second conductivity type in the substrate, surrounding the well, and the first and second transistor, and a doped region of the second conductivity type in the well, wherein profiles of a drain and source region of each of the first and second transistor are un-symmetrical, and an area of the drain region is smaller than that of the source region in each of the first and second transistor.

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patent: 2003/0047786 (2003-03-01), Lee et al.
“ESD Reliability Issues in RF CMOS Circuits” Radhakrishnan, et al., IMEC Website, Mar. 2002, 6 pages.

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