Low capacitance coupling wire bonded semiconductor device

Details Low capacitance coupling wire bonded semiconductor device Low capacitance coupling wire bonded semiconductor device

2007-03-27

2007-03-27

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S612000

Reexamination Certificate

active

10836949

ABSTRACT:
A semiconductor device having reduced self and mutual capacitance of bonded wires is provided by coating the wires with a foamed polymer effectively having a very low dielectric constant. Additional benefits are realized by electrically insulating the wires against short-circuiting, by cushioning the wires with a low modulus sheath, and by protecting chip bond pad metallizationTABLE 1Method of Moments Capacitance ModelsWire Dimensions25 × 25 micronsSeparation between Wires63.5 micronsDistance to ground 191 micronsModelDielectricSelf capacitanceMutual Capacitanceconstant ofWire 1Wire 2separationModelDielectricWire 1Wire 2-Mutual capconstantsself capself cappf/cmpf/cmpf/cmPlastic encased4.01.030.541.57packageCavity package4./1.0/4.0.310.120.43Foam sheath4./1./4./1./4.0.340.160.50wires/moldedWires - no1. 0.260.13 0.39.package

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