Field-effect transistor, semiconductor device including...

Details Field-effect transistor, semiconductor device including... Field-effect transistor, semiconductor device including...

2007-03-27

2007-03-27

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

10853121

ABSTRACT:
A high-accuracy, threshold-voltage-settable, field-effect transistor and a semiconductor device including the field-effect transistor are provided. The field-effect transistor, having a channel layer through which carriers move between a source and a drain, includes a doped layer for adjusting the threshold voltage of the transistor by changing the carrier concentration in the channel layer. In particular, the doped layer is provided in a semiconductor substrate by implantation of impurities.

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patent: 5406098 (1995-04-01), Hyuga et al.
patent: 5777353 (1998-07-01), Hsu et al.
patent: 5798540 (1998-08-01), Boos et al.
patent: 02-148740 (1990-06-01), None

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