Static information storage and retrieval – Read/write circuit – Precharge
Patent
1985-02-22
1987-04-07
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Precharge
365190, G11C 700
Patent
active
046566112
ABSTRACT:
A logic circuit includes a driver transistor and a load transistor formed by a junction type or Schottky barrier type field effect transistor, and an input terminal connected to a gate of the driving transistor. A gate voltage generator is connected to a gate of the load transistor and generates a level higher than the sum of threshold values of the load transistor and the driver transistor and lower than the lowest value of (1) the sum of a built-in voltage of the load transistor and the threshold voltage of the driver transistor and (2) the sum of a built-in voltage of the driver transistor and the threshold voltage of the load transistor.
REFERENCES:
patent: 4122548 (1978-10-01), Heuber et al.
patent: 4355377 (1982-10-01), Sud et al.
GaAs 1K Static RAM using Tungsten-Silicide Gate Self-Aligned Technology (p. 455, Fig. 12), by Naoki Yokoyama, Hiroyuki Onodera and Toyokazu Ohnishi, extracted from FUJITSU Scientific and Technical Journal, vol. 19, No. 4, (Dec. 15, 1983) printed in Japan.
Fujitsu Limited
Popek Joseph A.
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