Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S507000, C257SE21320, C257SE21561, C257SE27112, C438S149000
Reexamination Certificate
active
07023051
ABSTRACT:
One aspect of this disclosure relates to a method for straining a transistor body region. In various embodiments, oxygen ions are implanted to a predetermined depth in a localized region of a semiconductor substrate, and the substrate is annealed. Oxide growth within the semiconductor substrate forms a local oxide region within the semiconductor substrate. A portion of the substrate forms a semiconductor layer over the local oxide region. In various embodiments, the semiconductor layer is an ultra-thin semiconductor layer having a thickness of approximately 300 Å or less. The oxide growth strains the semiconductor layer. An active region, including the body region, of the transistor is formed in the strained semiconductor layer. Other aspects are provided herein.
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Flynn Nathan J.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Wilson Scott R
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