Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2006-05-09
2006-05-09
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S425000, C438S528000
Reexamination Certificate
active
07041575
ABSTRACT:
One aspect of this disclosure relates to a method for straining a transistor body region. In various embodiments, oxygen ions are implanted to a predetermined depth in a localized region of a semiconductor substrate, and the substrate is annealed. Oxide growth within the semiconductor substrate forms a local oxide region within the semiconductor substrate. A portion of the substrate forms a semiconductor layer over the local oxide region. In various embodiments, the semiconductor layer is an ultra-thin semiconductor layer having a thickness of approximately 300 Å or less. The oxide growth strains the semiconductor layer. An active region, including the body region, of the transistor is formed in the strained semiconductor layer. Other aspects are provided herein.
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Micro)n Technology, Inc.
Perkins Pamela E
Zarabian Amir
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