Local sense amplifier in memory device

Details Local sense amplifier in memory device Local sense amplifier in memory device

2007-06-26

2007-06-26

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S063000, C365S203000

Reexamination Certificate

active

11179408

ABSTRACT:
A memory device includes a decoder that sets an operational control signal and a column select line signal at a first logical level simultaneously. In addition, a local sense amplifier has at least one switching device that is turned on by the operational control signal that is at the first logical level to couple at least one local I/O line to at least one global I/O line. Furthermore, signal lines, that are disposed to be parallel, transmit the operational control signal and the column select line signal from the decoder.

REFERENCES:
patent: 5402379 (1995-03-01), McClure
patent: 6172918 (2001-01-01), Hidaka
patent: 6333889 (2001-12-01), Arimoto
patent: 6462998 (2002-10-01), Proebsting
patent: 2005/0141258 (2005-06-01), Kang et al.
Japanese Patent Application No. 10-012209 to Hiroki et al., having Publication date of Aug. 6, 1999 (w/ English Abstract page).
Korean Patent Application No. 1020000086436 to Kim, having Publication date of Jul. 12, 2002 (w/ English Abstract page).
Japanese Patent No. JP10326487 to Takashi, having Publication date of Dec. 8, 1998 (w/ English Abstract page).

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