Local interconnect for integrated circuit

Details Local interconnect for integrated circuit Local interconnect for integrated circuit

2005-03-29

2005-03-29

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S664000, C438S682000

Reexamination Certificate

active

06872612

ABSTRACT:
An integrated circuit having a gate region, a source drain region, and an electrically nonconductive spacer separating the gate region and the source drain region. A local interconnect electrically connects the gate region to the source drain region across the electrically nonconductive spacer. The local interconnect is formed of a semiconducting material reacted with a metal. The local interconnect may be formed by implanting a precursor species into the electrically nonconductive spacer. A metal layer is deposited over at least the electrically nonconductive spacer, and the integrated circuit is heated to form an electrically conductive local interconnect from the metal layer and the precursor species implanted in the electrically nonconductive spacer.

REFERENCES:
patent: 5908813 (1999-06-01), Givens
patent: 6429124 (2002-08-01), Tang et al.
patent: 6617660 (2003-09-01), Murai et al.
patent: 6653705 (2003-11-01), Ushijima et al.
patent: 411284184 (1999-10-01), None

Affiliated with

Also associated with

Rating

Local interconnect for integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Local interconnect for integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Local interconnect for integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3419719