Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-01-09
2007-01-09
Phung, Cach (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185250, C365S230060
Reexamination Certificate
active
11115373
ABSTRACT:
A local input/output line precharge circuit of a semiconductor memory device comprises a precharge control unit, an equalization unit and a data output unit. The precharge control unit outputs a precharge control signal to precharge a pair of local input/output lines in response to a continuous write signal activated when a write operation continues. The equalization unit precharges and equalizing the pair of local input/output lines in response to the precharge control signal. The data output unit outputs data signals of a pair of global input/output lines to the pair of local input/output lines in response to output signal from the equalization unit. In the circuit, a local input/output line precharge operation is not performed at a continuous write mode, thereby reducing current consumption.
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Cho Ho Youb
Ha Sung Joo
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Phung Cach
Wendler Eric J.
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