Local dry etching method

Details Local dry etching method Local dry etching method

2006-08-22

2006-08-22

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S058000, C216S059000, C216S067000, C134S002000, C134S095300, C438S706000, C438S710000, C438S719000, C438S722000, C438S723000

Reexamination Certificate

active

07094355

ABSTRACT:
This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled relative speed with a nozzle for applying a flow of activated species gas to the surface of the semiconductor wafer. The removal of this oxide film is carried out by widening an etching profile and a scan pitch and making the nozzle speed constant, and then flattening is carried out in the same local dry etching apparatus. For flattening, the nozzle speed is changed for each area according to initial unevenness.

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