Loadless SRAM

Details Loadless SRAM Loadless SRAM

2006-07-31

2009-02-17

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189050, C365S189200

Reexamination Certificate

active

07492625

ABSTRACT:
A loadless static random access memory (SRAM) may have transfer transistors with at least two threshold voltages. In some embodiments, the transfer transistors may have gate structures with different portions that produce electric fields in different directions. In some embodiments the transfer gate structures may extend down the sidewalls of an active region. In other embodiments, the transfer transistors may have gate structures with different portions that have different gate lengths.

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English language abstract of Japanese Publication No. 6-338601.
English language abstract of Japanese Publication No. 2000-124333.

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