Lithography pattern shrink process and articles

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S270100

Reexamination Certificate

active

07122296

ABSTRACT:
Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering. The inventive methods are useful for providing highly conformal coatings on large surface substrates having super submicron (i.e., 0.15 μm or smaller) features. The process is environmentally friendly and relatively low cost compared to other options.

REFERENCES:
patent: 4256514 (1981-03-01), Pogge
patent: 4838991 (1989-06-01), Cote et al.
patent: 5017515 (1991-05-01), Gill
patent: 5362812 (1994-11-01), Holmes et al.
patent: 5618379 (1997-04-01), Armacost et al.
patent: 5863707 (1999-01-01), Lin
patent: 5895740 (1999-04-01), Chien et al.
patent: 6048799 (2000-04-01), Prybyla
patent: 6406544 (2002-06-01), Stewart
patent: 2002/0093122 (2002-07-01), Choi et al.
patent: 2003/0003401 (2003-01-01), Wiltshire
patent: 2003/0044726 (2003-03-01), Chen et al.

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