Lithography masks for improved line-end patterning

Details Lithography masks for improved line-end patterning Lithography masks for improved line-end patterning

2007-06-19

2010-10-19

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000

Reexamination Certificate

active

07816061

ABSTRACT:
In one embodiment, a mask for use in semiconductor processing comprises a first region formed from a first material that is primarily opaque, a second region formed from a second material that is primarily transmissive, and a third region in which at least a portion of the second material is removed to generate a phase shift in radiation applied to the mask.

REFERENCES:
patent: 6566019 (2003-05-01), Kling et al.
patent: 7326501 (2008-02-01), Tejnil
patent: 7445874 (2008-11-01), Tan et al.

Affiliated with

Also associated with

Rating

Lithography masks for improved line-end patterning does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithography masks for improved line-end patterning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithography masks for improved line-end patterning will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4187945