Lithography mask inspection

Details Lithography mask inspection Lithography mask inspection

1990-02-28

1992-06-23

Evans, F. L.

Optics: measuring and testing

By configuration comparison

With comparison to master, desired shape, or reference voltage

356237, G01B 1102

Patent

active

051237431

ABSTRACT:
A method of detecting defects in a lithography mask by exposing a first mask onto a positive resist, and a second, ostensibly identical mask onto a negative resist. Remaining particles of resist after development correspond to spots in the first mask, or to holes in the second mask. The process may be repeated with the tones of the resists reversed to detect holes in the first mask, or spots in the second mask.

REFERENCES:
patent: 1135919 (1915-04-01), Pilkington
patent: 3648587 (1972-03-01), Stevens
patent: 4586822 (1986-05-01), Tanimoto
patent: 4718767 (1988-01-01), Hazama
Chamot et al, "Handbook of Chemical Microscopy," vol. I, 1930, pp. 23-25.
Liu et al., "Study of Aging Effects in a Chemical Amplification Resist: SAL601-ER7," J. Vac. Sci. Techno. B, vol. 7, No. 6, Nov./Dec. 1989, pp. 1740-1744.

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