Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-30
2007-01-30
Thanh, Nguyen (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S206000, C438S335000, C438S336000, C438S350000
Reexamination Certificate
active
10977161
ABSTRACT:
A method for formation of openings in semiconducting devices not limited by constraints of photolithography include forming a first dielectric layer over a semiconducting substrate, depositing a polysilicon layer over the first dielectric layer, forming a second dielectric layer over the polysilicon layer, forming a third dielectric layer over the second dielectric layer, etching a dielectric window through the third dielectric layer, forming a fourth dielectric layer into the dielectric window and over the third dielectric layer, the fourth dielectric layer being of a material dissimilar to the second dielectric layer, etching the fourth dielectric layer anisotropically using an etchant with a high selectivity ratio between the fourth dielectric layer and the second dielectric layer thereby forming a spacer, and etching portions of the first and second dielectric layers and the polysilicon layer anisotropically, the portions underlying an area bounded by a periphery of the spacer thereby forming the opening.
REFERENCES:
patent: 5026663 (1991-06-01), Zdebel et al.
patent: 5402002 (1995-03-01), Meister et al.
patent: 6194829 (2001-02-01), Lu
patent: 6413802 (2002-07-01), Hu et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 2002/0060338 (2002-05-01), Zhang
Wolf, Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 520-529.
J.M. Hergenrother et al. (Bell Laboratories, Lucent Technologies, Murray Hill, N.J. 07974, USA), “The Vertical Replacement-Gate (VRG) MOSFET: A 50-nm Vertical MOSFET with Lithography-Independent Gate Length”, IEEE 1999 Int'l Electron Devices Meeting, pp. 3.6.1-3.6.4.
D. Monroe et al. (Lucent Technologies, Bell Labs Innovations), “Revolutionary Transistor Turns Silicon World on End”, Apr. 2000, Lucent Technologies, 3 pages.
Atmel Corporation
Schneck Thomas
Schneck & Schneck
Thanh Nguyen
LandOfFree
Lithography-independent fabrication of small openings for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithography-independent fabrication of small openings for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithography-independent fabrication of small openings for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3727395