Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-01-08
2000-11-14
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438424, 438314, 438968, 438622, 257330, H01L 214763
Patent
active
061469866
ABSTRACT:
An improved method of forming a metallization layer in a layer stack is disclosed. In one aspect of the invention, a method of performing a lithographic damascene etch on a layer stack to form a metal line is disclosed. The layer stack, which is disposed above a substrate, is comprised of an underlying layer. The method of performing the lithographic damascene etch comprises the steps of depositing a photoresist layer above the layer stack and forming a trench in the photoresist layer so that the trench is positioned over the underlying layer of the layer stack. The method continues with depositing a metal layer over the top surface of the photoresist layer and filling the trench, planarizing the metal layer down to about a level of the top surface of the photoresist layer to define a top surface of a metal line, and removing the photoresist layer to leave gaps around the metal line. A dielectric material is then deposited to fill the gaps around the metal line up to a level of about the top surface of the metal line.
REFERENCES:
patent: 5516625 (1996-05-01), McNamara et al.
patent: 5736457 (1998-04-01), Zhao
patent: 5945707 (1999-08-01), Bronner et al.
patent: 5963818 (1999-10-01), Kao et al.
Klawuhn et al., "Integration Of Cu Electroplating Technology With Physical Vapor Deposition Of Ta And Cu Layers Using A Hollow Cathode Magnetron Plasma Source" Novellus Systems, Inc., 3011 North First Sreet, San Jose, CA 95134.
Elms Richard
Lam Research Corporation
Luu Pho
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