Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2011-03-01
2011-03-01
Davis, Daborah Chacko (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S322000, C430S330000
Reexamination Certificate
active
07897324
ABSTRACT:
The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.
REFERENCES:
patent: 5178989 (1993-01-01), Heller et al.
patent: 5968712 (1999-10-01), Thackeray et al.
patent: 6153349 (2000-11-01), Ichikawa et al.
patent: 6338934 (2002-01-01), Chen et al.
patent: 6495307 (2002-12-01), Yasunori et al.
patent: 6534243 (2003-03-01), Templeton et al.
patent: 6780569 (2004-08-01), Hudson et al.
patent: 6787283 (2004-09-01), Aoai et al.
patent: 2001/0046641 (2001-11-01), Uetani et al.
patent: 2003/0031956 (2003-02-01), Wijnaendts et al.
patent: 2003/0175620 (2003-09-01), Toishi et al.
patent: 0558280 (1993-09-01), None
patent: 0660187 (1995-06-01), None
Lammers Jeroen H
Van Steenwinckel David
Zandbergen Peter
Chacko Davis Daborah
NXP B.V.
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