Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-12-28
2009-02-17
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
07491951
ABSTRACT:
The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.
REFERENCES:
patent: 6479830 (2002-11-01), Fornaca et al.
patent: 6781673 (2004-08-01), Moors et al.
patent: 7183717 (2007-02-01), Smith et al.
patent: 7217941 (2007-05-01), Rettig et al.
patent: 2004/0179182 (2004-09-01), Bakker
Banine Vadim Yevgenyevich
Mertens Bastiaan Matthias
Moors Johannes Hubertus Josephina
Nijkerk Michiel D.
Van Der Velden Marc Hubertus Lorenz
ASML Netherlands B.V.
Berman Jack I
Carl Zeiss SMT AG
Pillsbury Winthrop Shaw & Pittman LLP
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