Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-04-22
2008-04-22
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C430S302000, C430S297000
Reexamination Certificate
active
07361911
ABSTRACT:
A device manufacturing method includes projecting a patterned beam of radiation through an optics compartment and a channel that provides an open connection between the optics compartment and a substrate compartment onto a substrate, maintaining an ionized flush gas at a higher pressure in the channel than in the substrate compartment and in the optics compartment during the projecting, intercepting particles that emanate from the substrate with the ionized flush gas, pumping the flush gas carrying the intercepted particles from the substrate compartment using a pump coupled to a gas outlet coupled to at least one of the compartments, and establishing an electrical potential difference between a wall of the channel and the outlet and/or a rotor of the pump so that the outlet and/or the rotor of the pump attracts positively charged ions that stem from the flush gas in the channel.
REFERENCES:
patent: 5559584 (1996-09-01), Miyaji et al.
patent: 6369874 (2002-04-01), del Puerto
patent: 6576912 (2003-06-01), Visser et al.
patent: 6614505 (2003-09-01), Koster et al.
patent: 6683936 (2004-01-01), Jonkers
patent: 6841342 (2005-01-01), Nishi et al.
patent: 2003/0071979 (2003-04-01), Visser
patent: 0 532 968 (1993-03-01), None
patent: 0 957 402 (1999-01-01), None
patent: 0 957 402 (2000-03-01), None
patent: 1 422 568 (2004-05-01), None
Banine Vadim Yevgenyevich
Heerens Gert-Jan
Heuts Frederik Theodorus Elisabeth
Jacobs Johannes Henricus Wilhelmus
Liebregts Paulus Martinus Maria
ASML Netherlands B.V.
Berman Jack I.
Pillsbury Winthrop Shaw & Pittman LLP
Smyth Andrew
LandOfFree
Lithographic apparatus and device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic apparatus and device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic apparatus and device manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2788352