Lithographic apparatus and device manufacturing method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S005000, C430S030000, C430S022000, C430S311000, C430S396000

Reexamination Certificate

active

08043797

ABSTRACT:
A method for transferring an image of a mask pattern through a pitch range onto a substrate is presented. In an embodiment, the method includes illuminating the mask pattern of an attenuated phase shift mask using a multipole illumination that includes an on-axis component and an off-axis component, the mask pattern including non-printing assist features configured for a pitch larger than twice a minimum pitch of the mask pattern, and projecting an image of the illuminated mask pattern onto the substrate.

REFERENCES:
patent: 5447810 (1995-09-01), Chen et al.
patent: 5821014 (1998-10-01), Chen et al.
patent: 6452662 (2002-09-01), Mulkens et al.
patent: 6519760 (2003-02-01), Shi et al.
patent: 6787272 (2004-09-01), Yu
patent: 2004/0209170 (2004-10-01), Broeke et al.
patent: 2004/0265710 (2004-12-01), Kohler et al.
patent: 2005/0081180 (2005-04-01), Kotani et al.
patent: 1 237 046 (2002-09-01), None
patent: 05-326370 (1993-12-01), None
patent: 09-074063 (1997-03-01), None
patent: 2003-234285 (2003-08-01), None
patent: 2003-318100 (2003-11-01), None

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