Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-04-22
2008-04-22
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C430S302000, C430S297000
Reexamination Certificate
active
11007579
ABSTRACT:
A device manufacturing method includes projecting a patterned beam of radiation through an optics compartment and a channel that provides an open connection between the optics compartment and a substrate compartment onto a substrate, maintaining an ionized flush gas at a higher pressure in the channel than in the substrate compartment and in the optics compartment during the projecting, intercepting particles that emanate from the substrate with the ionized flush gas, pumping the flush gas carrying the intercepted particles from the substrate compartment using a pump coupled to a gas outlet coupled to at least one of the compartments, and establishing an electrical potential difference between a wall of the channel and the outlet and/or a rotor of the pump so that the outlet and/or the rotor of the pump attracts positively charged ions that stem from the flush gas in the channel.
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Banine Vadim Yevgenyevich
Heerens Gert-Jan
Heuts Frederik Theodorus Elisabeth
Jacobs Johannes Henricus Wilhelmus
Liebregts Paulus Martinus Maria
ASML Netherlands B.V.
Berman Jack I.
Pillsbury Winthrop Shaw & Pittman LLP
Smyth Andrew
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