Liquid phase deposition method for growing a titanium dioxide on

Details Liquid phase deposition method for growing a titanium dioxide on Liquid phase deposition method for growing a titanium dioxide on

1999-03-11

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438767, 438653, 438648, 428432, H01L 21324

Patent

active

061535397

ABSTRACT:
A liquid phase deposition method for growing a titanium dioxide on the gallium arsenide substrate is disclosed. Wherein the solution of hexafluorotitanic acid (H.sub.2 TiF.sub.6) is added with nitric acid (HNO.sub.3) and boric acid (H.sub.3 BO.sub.3) or only added with a nitric acid. Thus a titanium dioxide film is grown on the gallium arsenide substrate which is the most important material of semiconductor. The refractive index will achieve to a value of 2.5. The growth rate can be exactly controlled by the concentration of the nitric acid. The present invention has the advantages of lower cost and low growing temperature. Not only the industrial necessity is satisfied, but also the disadvantages from other growing process having a high cost and expensive equipment is avoided. Thus, the present invention is potentially used in the process of integrated circuits, such as being used in the memory structure with a higher dielectric constant.
Moreover, since the titanium dioxide has special photoelectric properties, which can be employed in the waveguides, optic filters, antireflecting coatings and other semiconductor elements of photoelectric compounds. From the experimental result, it is appreciated that the liquid phase deposition method for growing a titanium dioxide on the gallium arsenide substrate of the present invention is useful in many applications.

REFERENCES:
patent: 5352485 (1994-10-01), DeGuire et al.
patent: 5545432 (1996-08-01), Deguire et al.
patent: 5595813 (1997-01-01), Ogawa et al.
patent: 5811192 (1998-09-01), Takahama et al.
patent: 5877330 (1999-03-01), Kishimoto et al.

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