Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-27
2007-11-27
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C257SE21419
Reexamination Certificate
active
11099519
ABSTRACT:
A polycrystalline silicon thin film transistor of a bottom gate structure is used as a switching element and a mask having transmissive, half-transmissive and blocking areas is used so that an array substrate for a liquid crystal display device having a monolithic driving circuit can be fabricated through a six-mask process.
REFERENCES:
patent: 2001/0025959 (2001-10-01), Yamazaki et al.
patent: 10-223906 (1998-08-01), None
patent: 2001-264804 (2001-09-01), None
Hwang Kwang-Sik
Oh Kum-Mi
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Smith Bradley K.
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