Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-09
2007-10-09
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S482000, C438S486000, C438S488000, C438S924000
Reexamination Certificate
active
10875308
ABSTRACT:
There is disclosed a liquid crystal display device and a fabricating method thereof that reduce the number of processes and production cost. A liquid crystal display device and a fabricating method thereof according to an embodiment of the present invention forms a poly-silicon pattern by partially crystallizing an amorphous silicon, and simultaneously etches the amorphous silicon and the poly-silicon pattern, thereby removing the amorphous silicon and leaving the poly-silicon pattern on the substrate.
REFERENCES:
patent: 5952694 (1999-09-01), Miyawaki et al.
patent: 6916693 (2005-07-01), Ohnuma et al.
patent: 6962860 (2005-11-01), Yamazaki et al.
patent: 1088002 (1994-06-01), None
patent: 1501449 (2004-06-01), None
LG.Philips LCD Co. , Ltd.
Louie Wai-Sing
McKenna Long & Aldridge LLP
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