Liner protection in deep trench etching

Details Liner protection in deep trench etching Liner protection in deep trench etching

2010-05-18

2011-10-04

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

08030157

ABSTRACT:
A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.

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