Liner for tungsten/silicon dioxide interface in memory

Details Liner for tungsten/silicon dioxide interface in memory Liner for tungsten/silicon dioxide interface in memory

2007-09-28

2011-12-06

Hoang, Quoc (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21023

Reexamination Certificate

active

08071475

ABSTRACT:
A semiconductor wafer assembly includes a base of dielectric. A layer of silicon is deposited thereover. A metal hard mask is deposited over the silicon. A dielectric hard mask is deposited over the metal hard mask. Photoresist is deposited over the dielectric hard mask, whereby a plurality of sacrificial columns is formed from the layer of metal hard mask through the photoresist such that the sacrificial columns extend out from the silicon layer. An interface layer is disposed between the layer of conductive material and the layer of hard mask to enhance adhesion between each of the plurality of sacrificial columns and the layer of conductive material to optimize the formation of junction diodes out of the silicon by preventing the plurality of sacrificial columns from being detached from the layer of silicon prematurely due to the sacrificial columns peeling or falling off.

REFERENCES:
patent: 4929569 (1990-05-01), Yaniv et al.
patent: 6153537 (2000-11-01), Bacchetta et al.
patent: 6952030 (2005-10-01), Herner et al.
patent: 6969685 (2005-11-01), Li et al.
patent: 6972252 (2005-12-01), Sanganeria et al.
patent: 7575984 (2009-08-01), Radigan et al.
patent: 2001/0035582 (2001-11-01), Tesauro et al.
patent: 2006/0006495 (2006-01-01), Herner et al.
patent: 2007/0054491 (2007-03-01), Chen
patent: 1 796 103 (2007-06-01), None
patent: WO 2007/075568 (2007-07-01), None
International Search Report and Written Opinion dated Jan. 30, 2009, received in corresponding application No. PCT/US2008/011216.
U.S. Appl. No. 10/955,549.
U.S. Appl. No. 11/148,530.
U.S. Appl. No. 11/149,325.
U.S. Appl. No. 11/311,841.
U.S. Appl. No. 10/165,393.

Affiliated with

Also associated with

Rating

Liner for tungsten/silicon dioxide interface in memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liner for tungsten/silicon dioxide interface in memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liner for tungsten/silicon dioxide interface in memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4261265