Linear capacitor and process for making same

Details Linear capacitor and process for making same Linear capacitor and process for making same

1998-05-08

2000-07-18

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438210, 438233, 438250, 438253, 438393, 438396, H01L 218242

Patent

active

060906561

ABSTRACT:
A capacitor that is a metal to polysilicon capacitor. The capacitor is fabricated by forming a field oxide layer on a substrate. Then, a polysilicon segment is formed on the field oxide layer. This polysilicon segment forms a polysilicon bottom plate for the capacitor. A dielectric layer is formed and planarized. An opening is made in the dielectric layer to expose a portion of the polysilicon segment. Then, an oxide layer is formed on exposed portions of the polysilicon segment. A metal segment is formed on the oxide layer over the opening, wherein the metal segment forms a top-plate for the semiconductor device.

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