Line edge roughness reduction

Details Line edge roughness reduction Line edge roughness reduction

2006-02-22

2008-12-02

Richards, N. Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S637000, C438S689000, C438S694000, C438S717000, C257SE21256, C257SE21257

Reexamination Certificate

active

07459363

ABSTRACT:
A method for reducing line edge roughness comprises forming a masking structure on a substrate assembly, wherein the substrate assembly includes a number of layers. The method includes forming a layered masking structure by depositing a layer of material on the masking structure in order to reduce a line edge roughness (LER) of the masking structure, and etching a pattern of the layered masking structure into one or more of the number of layers of the substrate assembly before trimming the layered masking structure.

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