Line edge roughness reduction

Details Line edge roughness reduction Line edge roughness reduction

2006-11-14

2006-11-14

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S725000, C257SE21024

Reexamination Certificate

active

07135419

ABSTRACT:
A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable for smoothing the line edge roughness.

REFERENCES:
patent: 5858620 (1999-01-01), Ishibashi et al.
patent: 6057084 (2000-05-01), Mohondro
patent: 2002/0058425 (2002-05-01), Richter et al.
patent: 2002/0168594 (2002-11-01), Lin et al.

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