Limiting magnetic writing fields to a preferred portion of a cha

Details Limiting magnetic writing fields to a preferred portion of a cha Limiting magnetic writing fields to a preferred portion of a cha

1998-02-10

1999-08-31

Mai, Son

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365158, G11C 1115

Patent

active

059462280

ABSTRACT:
Magnetic devices are disclosed which include a changeable magnetic region, within which each of two magnetic states can be imposed, using an applied magnetic writing stimuli. Upon subsequent electrical tunneling through the device, for example, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate, reference magnetic region, can be sensed, thereby providing a binary storage capability. The present invention limits the magnetic writing stimuli to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably written opposite of one another. The magnetic writing stimuli is limited to a preferred portion of the changeable magnetic region by either narrowing the bitline and/or wordline structures associated with applying the magnetic stimuli, and/or by lengthening the changeable magnetic region into an elongated structure such that its elongated dimension is greater than the lateral dimension of either or both of its respective wordline and bitline. The principles of the present invention can be applied to magnetic random access ("MRAM") arrays, which employ magnetic tunnel junction ("MTJ") cells at respective intersections of bitlines and wordlines.

REFERENCES:
patent: 5341118 (1994-08-01), Parkin et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5748519 (1998-05-01), Tehrani et al.
patent: 5838608 (1998-11-01), Zhu et al.
Fernandex, P.J., et al., "Magnetic Force Microscopy of Single-Domain Cobalt Dots Patterned Using Interference Lithography," IEEE Transactions on Magnetics, vol. 32, No. 5, (Sep. 1996), pp. 4472-4474.
Zheng, Y. & Zhu, J., "Micromagnetic Pinciples in Pseudo Spin Valve Memory Element Design," IEEE Transactions on Magnetics, vol. 33, No. 5, (Sep. 1997), pp. 3286-3288.

Affiliated with

Also associated with

Rating

Limiting magnetic writing fields to a preferred portion of a cha does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Limiting magnetic writing fields to a preferred portion of a cha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Limiting magnetic writing fields to a preferred portion of a cha will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427898