Semiconductor device having device supplying voltage higher than

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G11C 1134

Patent

active

059462299

ABSTRACT:
The present invention provides a semiconductor device with small space factor, which controls the application of voltages higher than a power supply voltage to internal circuits. This device includes a first transistor provided with a semiconductor substrate of one conductive type, a first region of second conductivity type formed in the semiconductor substrate, a second region of the second conductivity type formed independent of the first region, a third region of the first conductivity type formed in the first region, and a fourth region of the first conductivity type formed in the first region independent of the third region, having the first region as its back gate, and a second transistor provided with a fifth region of the first conductivity type formed in the second region and a sixth region of the first conductivity type formed in the second region independent of the fifth region, having the second region as its back gate, wherein a back gate bias voltage higher than the power supply voltage applied to the second region is applied to the first region.

REFERENCES:
patent: 4156939 (1979-05-01), Takemae et al.
patent: 4492973 (1985-01-01), Ogura
patent: 5757717 (1998-05-01), Kondou et al.

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