Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-10-09
2007-10-09
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S424000, C438S444000, C438S706000
Reexamination Certificate
active
11162766
ABSTRACT:
The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.
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Hichri Habib
Larsen Kimberly A.
Maynard Helen L.
Petrarca Kevin S.
Jaklitsch Lisa U.
Vinh Lan
Yaghmour Rosa S.
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