Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-09
2009-12-15
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27132, C257S072000
Reexamination Certificate
active
07633106
ABSTRACT:
The present invention provides a light shield for shielding the floating diffusion of a complementary metal-oxide semiconductor (CMOS) imager. In accordance with an embodiment of the present invention, there is provided a pixel sensor cell including: a device region formed on a substrate; and a first layer of material forming a sidewall adjacent to a side of the device region for blocking electromagnetic radiation from the device region.
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Adkisson James W.
Gambino Jeffrey P.
Jaffe Mark D.
Budd Paul A
Canale Anthony J.
Hoffman Warnick LLC
International Business Machines - Corporation
Jackson, Jr. Jerome
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