Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2007-10-09
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C345S038000, C345S050000, C345S055000, C345S092000, C349S024000, C349S028000, C349S034000, C349S041000, C349S042000
Reexamination Certificate
active
10972213
ABSTRACT:
In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An alternating bias voltage is applied to the first electrode. An off voltage is applied to the control electrode. The second electrode outputs a light-induced leakage current based on an externally provided light and the bias voltage. Therefore, the array substrate includes one light sensing switching element corresponding to one pixel so that structure of the array substrate is simplified and opening ratio is increased.
REFERENCES:
patent: 6995743 (2006-02-01), Boer et al.
Cho Jong-Whan
Jeon Jin
Jung Young-Bae
Kim Hyung-Guel
Pak Sang-Jin
Lawrence Don C.
MacPherson Kwok & Chen & Heid LLP
Rodela Eduardo A.
Tran Minhloan
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