Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE31053, C348S294000, C345S092000, C345S104000
Reexamination Certificate
active
08004025
ABSTRACT:
In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An alternating bias voltage is applied to the first electrode. An off voltage is applied to the control electrode. The second electrode outputs a light-induced leakage current based on an externally provided light and the bias voltage. Therefore, the array substrate includes one light sensing switching element corresponding to one pixel so that structure of the array substrate is simplified and opening ratio is increased.
REFERENCES:
patent: 6995743 (2006-02-01), Boer et al.
patent: 2003/0156087 (2003-08-01), Boer et al.
Cho Jong-Whan
Jeon Jin
Jung Young-Bae
Kim Hyung-Guel
Pak Sang-Jin
Innovation Counsel LLP
Rodela Eduardo A
Samsung Electronics Co,. Ltd.
Thomas Tom
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