Light intensity simulation method, program product, and...

Details Light intensity simulation method, program product, and... Light intensity simulation method, program product, and...

2005-03-01

2005-03-01

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

06862726

ABSTRACT:
Light intensities at light intensity calculation points on the photomask are found approximately based on distances from barycenters of opening patterns, and areas and transmission factors of the opening patterns. Thereafter, the result is added to a distribution of light intensity which is obtained by the conventional simulation without consideration given to the influence of the local flare. According to such a method, it is possible to easily carry out the simulation of the light intensity with high accuracy.

REFERENCES:
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patent: 5745370 (1998-04-01), Ohtsu et al.
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6487503 (2002-11-01), Inui
patent: 6526564 (2003-02-01), Gilson
patent: 6606739 (2003-08-01), Kanatake et al.
patent: 6745372 (2004-06-01), Cote et al.

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